STT818B Overview
In this device, the DC current gain is 100 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 20mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This device can take an input voltage of 30V volts before it breaks down.The maximum collector current is 3A volts.
STT818B Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 500mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
STT818B Applications
There are a lot of STMicroelectronics STT818B applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
