ZXTP05120HFFTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 3000 @ 1A 5V.A collector emitter saturation voltage of 900mV ensures maximum design flexibility.A VCE saturation (Max) of 2V @ 2mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages of -1A should be maintained to achieve high efficiency.With the emitter base voltage set at -10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Breakdown input voltage is 120V volts.A maximum collector current of 1A volts can be achieved.
ZXTP05120HFFTA Features
the DC current gain for this device is 3000 @ 1A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 2V @ 2mA, 2A
the emitter base voltage is kept at -10V
a transition frequency of 150MHz
ZXTP05120HFFTA Applications
There are a lot of Diodes Incorporated ZXTP05120HFFTA applications of single BJT transistors.
Interface
Muting
Inverter
Driver
