NSV2SC5658M3T5G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.A VCE saturation (Max) of 400mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 180MHz.In extreme cases, the collector current can be as low as 150mA volts.
NSV2SC5658M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 180MHz
NSV2SC5658M3T5G Applications
There are a lot of ON Semiconductor NSV2SC5658M3T5G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
