Name: STS4DNF60L
Brand: STMicroelectronics
SKU: STS4DNF60L
Price: 2.41000 USD
Availability: InStock

new-10%

STS4DNF60L

Manufacturer part number:STS4DNF60L

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 60V 4A 8-Pin SO N T/R

Case Package:SOT-23

Datasheet:STS4DNF60L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	STripFET™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	55mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	4A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS4D
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	15 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1030pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	28ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	4A
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	15V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	16A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.25mm
Length	5mm
Width	4.05mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STS4DNF60L Product Details

The STMicroelectronics STS4DNF60L Transistors - FETs, MOSFETs - Arrays is a high-performance, low-power N-channel MOSFET array. This device is designed to provide superior switching performance and low on-resistance. It features a maximum drain-source voltage of 60V and a maximum drain current of 4A. The STS4DNF60L is packaged in an 8-pin SO N T/R package, making it suitable for a wide range of applications. It is also RoHS compliant and has a maximum junction temperature of 175°C. This device is ideal for use in power management, motor control, and other high-current applications.