IRF7319TRPBF Description
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient and reliable device that can be used in a variety of applications.
SO-8 is improved through customized ead rame to enhance thermomechanical properties and multi-chip capabilities, making it suitable for power applications. Through these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology.
IRF7319TRPBF Features
Generation VTechnology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free
IRF7319TRPBF Applications
it provides designers with an extremely efficient and reliable device that can be used in a variety of applications.
