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SSM6N57NU,LF

SSM6N57NU,LF

SSM6N57NU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

SOT-23

SSM6N57NU,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Operating Temperature150°C TJ
PackagingCut Tape (CT)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation1W
Reach Compliance Code unknown
Element ConfigurationDual
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 46m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
FET Feature Standard
RoHS StatusRoHS Compliant
In-Stock:11896 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.213035$0.213035
10$0.200976$2.00976
100$0.189600$18.96
500$0.178868$89.434
1000$0.168743$168.743

About SSM6N57NU,LF

The SSM6N57NU,LF from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 2N-CH 30V 4A UDFN6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SSM6N57NU,LF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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