Name: STP7NK40Z
Brand: STMicroelectronics
SKU: STP7NK40Z
Price: 1.98000 USD
Availability: InStock

new-10%

STP7NK40Z

Manufacturer part number:STP7NK40Z

Manufacturer:STMicroelectronics

Description:STP7NK40Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP7NK40Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1Ohm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	400V
Technology	MOSFET (Metal Oxide)
Current Rating	5.4A
Base Part Number	STP7N
Pin Count	3
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	535pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.4A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	30 ns
Reverse Recovery Time	220 ns
Continuous Drain Current (ID)	5.4A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	400V
Dual Supply Voltage	400V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP7NK40Z Product Details

STP7NK40Z Description

With a voltage of 400V, the STP7NK40Z is a Zener-protected N-channel Power MOSFET from STMicroelectronics. It is packaged in the TO-220-3 format. These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of DV/DT capability for the most demanding applications, in addition to a significant reduction in on-resistance.

STP7NK40Z Features

Extremely high DV/DT capability

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

STP7NK40Z Applications

Switching applications

Power Management

Industrial

DC-DC Conversion