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FDMC8882

FDMC8882

FDMC8882

ON Semiconductor

FDMC8882 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMC8882 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingGold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 200mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 14.3MOhm
Additional FeatureULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 18W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation18W
Case Connection DRAIN
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.3m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 945pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.5A Ta 16A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 10.5A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 34A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
Nominal Vgs 1.9 V
Height 750μm
Length 3.3mm
Width 3.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8020 items

Pricing & Ordering

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FDMC8882 Product Details

FDMC8882 Description

FDMC8882 N-Channel MOSFET is designed specifically for battery charge or loads switching in cellular handsets and other applications. FDMC8882 MOSFET features low on-state resistance. FDMC8882 ON Semiconductor enables better performance in the application and is used in Power Management and load switching applications, for instance, Notebook Computers and Portable Battery Packs.

FDMC8882 Features

Antimony oxides

Improve system efficiency

Low profile

RoHS Compliant

Free from halogenated

FDMC8882 Applications

Power Management

Load switching applications

Notebook Computers

Portable Battery Packs

Inverter


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