Name: STP6NK60ZFP
Brand: STMicroelectronics
SKU: STP6NK60ZFP
Price: 2.77000 USD
Availability: InStock

new-10%

STP6NK60ZFP

Manufacturer part number:STP6NK60ZFP

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 1.2 Ω @ 3A, 10V ±30V 905pF @ 25V 46nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STP6NK60ZFP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.2Ohm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP6N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	32W
Case Connection	ISOLATED
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	905pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	6A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	24A
Height	9.3mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP6NK60ZFP Product Details

STP6NK60ZFP N-Channel MOSFET Description

The STP6NK60ZFP is part of the SuperMESH series, which was created by extreme optimization of ST's well-known strip-based PowerMESH layout. In addition to significantly lowering on-resistance, special care is taken to ensure very good dv/dt capability for the most demanding applications.