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STP5NK80Z

STP5NK80Z

STP5NK80Z

STMicroelectronics

STP5NK80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP5NK80Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 9.071847g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.4Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating4.3A
Base Part Number STP5N
Pin Count3
Number of Elements 1
Power Dissipation-Max 110W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation110W
Turn On Delay Time18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4 Ω @ 2.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.3A Tc
Gate Charge (Qg) (Max) @ Vgs 45.5nC @ 10V
Rise Time25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 4.3A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3360 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.99000$1.99
50$1.60620$80.31
100$1.44560$144.56
500$1.12440$562.2

STP5NK80Z Product Details

STP5NK80Z Description


STMicroelectronics' STP5NK80Z Transistor is an 800V N-channel Zener-protected Power MOSFET designed with SuperMESH? technology, which was obtained through optimization of a well-established strip-based PowerMESH? structure.



STP5NK80Z Features


  • Very good manufacturing repeatability

  • Very low intrinsic capacitance

  • 100% Avalanche Tested

  • Gate charge minimized



STP5NK80Z Applications


  • Industrial

  • Switching application


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