Name: NTS4173PT1G
Brand: ON Semiconductor
SKU: NTS4173PT1G
Price: 0.42000 USD
Availability: InStock

new-10%

NTS4173PT1G

Manufacturer part number:NTS4173PT1G

Manufacturer:ON Semiconductor

Description:NTS4173PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTS4173PT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Power Dissipation-Max	290mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Turn On Delay Time	7.7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.2A Ta
Gate Charge (Qg) (Max) @ Vgs	10.1nC @ 10V
Rise Time	6.7ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	7.1 ns
Turn-Off Delay Time	19.9 ns
Continuous Drain Current (ID)	-1.2A
Threshold Voltage	-1.15V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-30V
Nominal Vgs	-1.15 V
Height	900μm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTS4173PT1G Product Details

NTS4173PT1G Description

NTS4173PT1G belongs to the family of P-channel power MOSFETs provided by ON Semiconductor based on the advanced planar technology for extremely low RDS (on). It is characterized by low threshold voltage and fast switching speed. On the basis of these features, it is well suited for a wide range of applications, including load switches, DC-DC converters, communication equipment, and more.