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STP45N65M5

STP45N65M5

STP45N65M5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 78m Ω @ 19.5A, 10V ±25V 3375pF @ 100V 91nC @ 10V TO-220-3

SOT-23

STP45N65M5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Series MDmesh™ V
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 78MOhm
Terminal Finish Matte Tin (Sn)
Additional FeatureULTRA LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Base Part Number STP45N
Number of Elements 1
Power Dissipation-Max 210W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation208W
Case Connection DRAIN
Turn On Delay Time79.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3375pF @ 100V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 79.5 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 810 mJ
Nominal Vgs 4 V
Height 15.75mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:777 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$8.38000$8.38
50$6.96840$348.42
100$6.34130$634.13
500$5.40076$2700.38

STP45N65M5 Product Details

STP45N65M5 Description


These products are N-channel MDmeshTM V Power MOSFETs built on a cutting-edge proprietary vertical manufacturing technique with the well-known PowerMESHTM horizontal layout architecture from STMicroelectronics. The resulting product is especially well suited for applications that need excellent power density and exceptional efficiency due to its extraordinarily low onresistance, which is unmatched among silicon-based Power MOSFETs.



STP45N65M5 Features


  • Worldwide best RDS(on) * area

  • Higher VDSS rating and high dv/dt capability

  • Excellent switching performance

  • 100% avalanche tested



STP45N65M5 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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