FDB035AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDB035AN06A0 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2002
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
3.5MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
80A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
310W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
22A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs
124nC @ 10V
Rise Time
93ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
22A
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
625 mJ
Height
4.83mm
Length
10.67mm
Width
11.33mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1509 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$2.95956
$2367.648
FDB035AN06A0 Product Details
FDB035AN06A0 Description
FDB035AN06A0 is an N-channel PowerTrench? MOSFET manufactured by onsemi. The N-channel MOSFET FDB035AN06A0 is produced using the advanced PowerTrench? process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU and battery protection circuits. The FDB035AN06A0 operates within ambient temperatures from -55 to 175°C and with a power dissipation of 310W.
FDB035AN06A0 Features
Low Miller Charge
Low Qrr Body Diode
RDS(on) = 3.2m? (Typ.) @ VGS = 10V, ID = 80A
QG(tot) = 95nC (Typ.) @ VGS = 10V
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
FDB035AN06A0 Applications
Synchronous Rectification for ATX / Server I Telecom PSU
Battery Protection Circuit
Motor drives and Uninterruptible Power Supplies
AC-DC Merchant Power Supply - Desktop PC
AC-DC Merchant Power Supply - Servers & Workstations
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