Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF2903ZPBF

IRF2903ZPBF

IRF2903ZPBF

Infineon Technologies

IRF2903ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF2903ZPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2005
Series HEXFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 290W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation290W
Case Connection DRAIN
Turn On Delay Time24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time100ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 260A
Drain-source On Resistance-Max 0.0024Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 820 mJ
Recovery Time 51 ns
Nominal Vgs 4 V
Height 9.02mm
Length 10.67mm
Width 4.83mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3713 items

Pricing & Ordering

QuantityUnit PriceExt. Price

IRF2903ZPBF Product Details

IRF2903ZPBF Description


IRF2903ZPBF is a kind of power MOSFET that is designed based on advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, it is designed with the characteristics of fast switching speed and improved repetitive avalanche rating. All of these make the device more efficient and reliable for use in a wide range of applications.



IRF2903ZPBF Features


  • Low on-resistance

  • Advanced processing techniques

  • Fast switching speed

  • Improved repetitive avalanche rating

  • Available in the TO-220AB package



IRF2903ZPBF Applications


  • System/load switch

  • Charge and discharge switch for battery applications


Get Subscriber

Enter Your Email Address, Get the Latest News