STP310N10F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a drain to source voltage of 100V. This device uses a novel gate structure and the ST's proprietary STripFETTM technology's 7th generation of design guidelines. The Power MOSFET that results has the lowest RDS(on) among all packages.
STP310N10F7 Features
Ultra low on-resistance
100% avalanche tested
STP310N10F7 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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