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STP310N10F7

STP310N10F7

STP310N10F7

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 2.7m Ω @ 60A, 10V ±20V 12800pF @ 25V 180nC @ 10V TO-220-3

SOT-23

STP310N10F7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series DeepGATE™, STripFET™ VII
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.7MOhm
Terminal Finish Tin (Sn)
Additional FeatureULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP310
Number of Elements 1
Power Dissipation-Max 315W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation315W
Case Connection DRAIN
Turn On Delay Time62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time108ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 148 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 3.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 720A
Height 15.75mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1435 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.75000$7.75
50$6.31620$315.81
100$5.79470$579.47
500$4.77792$2388.96

STP310N10F7 Product Details

STP310N10F7 Description


STP310N10F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a drain to source voltage of 100V. This device uses a novel gate structure and the ST's proprietary STripFETTM technology's 7th generation of design guidelines. The Power MOSFET that results has the lowest RDS(on) among all packages.



STP310N10F7 Features


  • Ultra low on-resistance

  • 100% avalanche tested



STP310N10F7 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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