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SI7858ADP-T1-GE3

SI7858ADP-T1-GE3

SI7858ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 20A PPAK SO-8

SOT-23

SI7858ADP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count8
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1.9W
Case Connection DRAIN
Turn On Delay Time40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 29A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 6V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V
Rise Time40ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 12V
Pulsed Drain Current-Max (IDM) 60A
Height 1.04mm
Length 4.9mm
Width 5.89mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2855 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.023798$3.023798
10$2.852640$28.5264
100$2.691170$269.117
500$2.538839$1269.4195
1000$2.395132$2395.132

About SI7858ADP-T1-GE3

The SI7858ADP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 12V 20A PPAK SO-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7858ADP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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