Name: 2N7002WT1G
Brand: ON Semiconductor
SKU: 2N7002WT1G
Price: 0.23000 USD
Availability: InStock

new-10%

2N7002WT1G

Manufacturer part number:2N7002WT1G

Manufacturer:ON Semiconductor

Description:2N7002WT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2N7002WT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.6Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	280mW Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	280mW
Turn On Delay Time	12.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C	310mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.7nC @ 4.5V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	55.8 ns
Continuous Drain Current (ID)	340mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Nominal Vgs	1 V
Height	900μm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

2N7002WT1G Product Details

2N7002WT1G Description

The onsemi 2N7002WT1G Transistor is a low-power N-channel tiny signal Power MOSFET. It has a drain source voltage of 60V and a continuous drain current of 310mA. It can be used in low side load switches, level shift circuits, DC-to-DC converters, DSC, and PDA applications.