STP21NM60ND Description
These FDMesh "II power MOSFET" with inherent fast recovery body diodes are produced using the second generation MDMesh technology. These revolutionary devices use a new stripe layout vertical structure with extremely low on-resistance and excellent switching performance. They are ideal for bridge topologies and ZVS phase shifters.
STP21NM60ND Features
? Intrinsic fast-recovery body diode
? Worldwide best RDS(on)*area amongst the fast
recovery diode devices
? 100% avalanche tested
? Low input capacitance and gate charge
? Low gate input resistance
? Extremely high dv/dt and avalanche
capabilities
STP21NM60ND Applications
? Switching applications
