IRFR13N20DTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFR13N20DTRPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2000
Series
HEXFET®
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
235mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
13A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
235m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
830pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Rise Time
27ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
13A
Threshold Voltage
5.5V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
52A
Dual Supply Voltage
200V
Recovery Time
210 ns
Nominal Vgs
5.5 V
Height
2.3876mm
Length
6.7056mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
In-Stock:3150 items
IRFR13N20DTRPBF Product Details
IRFR13N20DTRPBF Description
IRFR13N20DTRPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of IRFR13N20DTRPBF is -55°C~175°C TJ and its maximum power dissipation is 110W Tc. IRFR13N20DTRPBF has 3 pins and it is available in Tape & Reel (TR) packaging way.
IRFR13N20DTRPBF Features
Drain to Source Breakdown Voltage: 200V
JEDEC-95 Code: TO-252AA
Rds On (Max) @ Id, Vgs: 235m Ω @ 8A, 10V
JESD-30 Code: R-PSSO-G2
IRFR13N20DTRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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