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IRF3710SPBF

IRF3710SPBF

IRF3710SPBF

Infineon Technologies

IRF3710SPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF3710SPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 52 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2005
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 200W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 25V
Current - Continuous Drain (Id) @ 25°C 57A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 57A
Drain-source On Resistance-Max 0.023Ohm
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 280 mJ
RoHS StatusROHS3 Compliant
In-Stock:3283 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.12000$2.12
10$1.92400$19.24
100$1.56760$156.76
500$1.24310$621.55

IRF3710SPBF Product Details

IRF3710SPBF Description


The IRF3710SPBF from International Rectifier is a 100V single N channel HEXFET power MOSFET in the D2-PAK package. This IRF3710SPBF MOSFET features extremely low on-resistance per silicon area, rugged, fast switching, and fully avalanche rated. As a result, The IRF3710SPBF is well known to provide extreme efficiency and reliability which can be used in a wide variety of applications.



IRF3710SPBF Features


  • Advanced Process Technology

  • Ultra Low On-Resistance

  • Dynamic dv/dt Rating

  • 175°C Operating Temperature

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-Free



IRF3710SPBF Applications


  • Power Management

  • Industria

  • Portable Devices

  • Consumer Electronics


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