Name: STP11NK40ZFP
Brand: STMicroelectronics
SKU: STP11NK40ZFP
Price: 2.60000 USD
Availability: InStock

new-10%

STP11NK40ZFP

Manufacturer part number:STP11NK40ZFP

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 550m Ω @ 4.5A, 10V ±30V 930pF @ 25V 32nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STP11NK40ZFP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP11N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	ISOLATED
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	550m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	930pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.55Ohm
Drain to Source Breakdown Voltage	400V
Height	9.3mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

STP11NK40ZFP Product Details

STP11NK40ZFP Description

These high-voltage components are Zener-protected N-channel Power MOSFETs created by STMicroelectronics employing SuperMESHTM technology, an improvement of the well-known PowerMESHTM. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.