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FDN360P

FDN360P

FDN360P

ON Semiconductor

FDN360P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDN360P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 80MOhm
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating-2A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation500mW
Turn On Delay Time6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 298pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time13ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 20V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Max Junction Temperature (Tj) 150°C
Height 1.22mm
Length 2.92mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16811 items

Pricing & Ordering

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FDN360P Product Details

FDN360P Description

The FDN360P is a super SOT-23 surface mount single P channel PowerTrench MOSFET. For enhanced switching performance, the PowerTrench method has been optimized to minimize on-state resistance and preserve low gate charges. This gadget is ideal for battery-powered and low-voltage applications.


FDN360P Features

  • -2 A, -30 V

  • RDS(on) = 80 mΩ @ VGS = -10 V

  • RDS(on) = 125 mΩ @ VGS = -4.5 V

  • Low Gate Charge (6.2nC typical)

  • High Performance Trench Technology for Extremely Low rDS(on)

  • High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability


FDN360P Applications

  • Battery Powered Circuits

  • DC/DC Converter

  • Load Switch

  • Motor Drivers


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