FQPF13N50C Description
These N-channel enhanced power field effect transistors are produced using on Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.
FQPF13N50C Features
13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
Low Gate Charge (Typ. 43 nC)
Low Crss (Typ. 20 pF)
100% Avalanche Tested
FQPF13N50C Applications
efficient switching mode power supplies
active power factor correction
electronic lamp ballasts based on half-bridge topology
