STL7N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STL7N60M2 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STL7
Configuration
Single
Power Dissipation-Max
4W Ta 67W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.05 Ω @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
271pF @ 100V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
8.8nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Continuous Drain Current (ID)
5A
Drain Current-Max (Abs) (ID)
5A
RoHS Status
ROHS3 Compliant
In-Stock:4310 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STL7N60M2 Product Details
STL7N60M2 Description
The STL7N60M2 is an N-channel Power MOSFET developed using MDmesh? M2 technology. The STL7N60M2 MOSFET has low on-resistance and optimum switching properties because of its strip layout and an improved vertical structure, making it suited for the most demanding high-efficiency converters.
STL7N60M2 Features
Zener-protected
100% avalanche tested
Shallow gate charge
Excellent output capacitance (COSS) profile
STL7N60M2 Applications
Signal Processing
Power Management
Portable Devices
Consumer Electronics
Audio amplifier Circuits
Any Signal Amplification
Audio Preamplifier
Darlington pair
RF circuits
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