RCX100N25 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 7.29 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=250V. And this device has 250V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40A.By using drive voltage (10V), this device helps reduce its overall power consumption.
RCX100N25 Features
the avalanche energy rating (Eas) is 7.29 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 40A.
RCX100N25 Applications
There are a lot of ROHM Semiconductor
RCX100N25 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
