Name: NDF10N60ZH
Brand: ON Semiconductor
SKU: NDF10N60ZH
Price: 0.51000 USD
Availability: InStock

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NDF10N60ZH

Manufacturer part number:NDF10N60ZH

Manufacturer:ON Semiconductor

Description:NDF10N60ZH datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NDF10N60ZH Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	39W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	39W
Case Connection	ISOLATED
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	750m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1645pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Rise Time	31ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	10A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.75Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	40A
Height	16.12mm
Length	10.63mm
Width	4.9mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

NDF10N60ZH Product Details

NDF10N60ZH Description

NDF10N60ZH is a 600v Single N-Channel Power MOSFET. Due to the following features, the onsemi NDF10N60ZH can be applied in adapters (Notebook, Printer, Gaming), LCD Panel Power, Lighting Ballasts, and SMPS applications. The operating junction and storage temperature are between -55 and 150℃. The MOSFET NDF10N60ZH is in the TO-220-3 package with 39W power dissipation.