STL20DN10F7 Description
The device adopts the seventh generation design rules of ST's proprietary STripFET fabrication technology and adopts a new gate structure. The resulting power MOSFET shows the lowest RDS (on) of all packages.
STL20DN10F7 Features
? N-channel enhancement mode
? Lower RDS(on) x area vs previous generation
? 100% avalanche rated
STL20DN10F7 Applications
? Switching applications
