IRF7504TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
SOT-23
IRF7504TRPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Series
HEXFET®
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
2 (1 Year)
Number of Terminations
8
Resistance
270mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Voltage - Rated DC
-20V
Max Power Dissipation
1.25W
Terminal Form
GULL WING
Current Rating
-1.7A
Base Part Number
IRF7504PBF
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.25W
Turn On Delay Time
9.1 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
240pF @ 15V
Current - Continuous Drain (Id) @ 25°C
1.7A
Gate Charge (Qg) (Max) @ Vgs
8.2nC @ 4.5V
Rise Time
35ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
43 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
-1.7A
Threshold Voltage
-700mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Pulsed Drain Current-Max (IDM)
9.6A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
860μm
Length
3mm
Width
3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3370 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.530725
$1.530725
10
$1.444080
$14.4408
100
$1.362340
$136.234
500
$1.285226
$642.613
1000
$1.212477
$1212.477
IRF7504TRPBF Product Details
IRF7504TRPBF Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance persilicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well knowm for. providesthe desanerwth anextremevelcent and reliable device for use in a wide variety of applications. The newMicro8 package, with half the footprint area ofthe standard S08. provides the smallest footprint avallable in an Solcoutline. This makes the Micro8 an idealdevice for applications where printed circuit board space is at a premium. The lowprofile (<1.1mm) ofthe Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards
IRF7504TRPBF Features
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
IRF7504TRPBF Applications
• Rail Transportation
• Defense / Aerospace
• Industrial
• Process Control
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