FDS6911 Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low voltage and battery powered applications that require low series power consumption and fast switching.
FDS6911 Features
rDS(on) = 13 m|? @ VGS = 10
rDS(on) = 17 m|? @ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6911 Applications
This product is general usage and suitable for many different applications.
