STGWT40H65DFB Description
STGWT40H65DFB is an IGBT Transistor. The STMicroelectronics STGWT40H65DFB is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWT40H65DFB is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Additionally, the slightly positive VCE(sat) temperature coefficient and extremely narrow parameter distribution result in a safer paralleling operation.
STGWT40H65DFB Features
Minimized tail current
Maximum junction temperature: TJ = 175 °C
Low thermal resistance
High-speed switching series
Safe paralleling
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Very fast soft recovery antiparallel diode
STGWT40H65DFB Applications
