STGWT20H60DF Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT20H60DF Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.8 V (Typ.) @ IC = 20 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
STGWT20H60DF Applications
Photovoltaic inweters
Unteruplble power supply
Welding
Pover facor corredion
Very high frequency converters
