IRGP4069PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP4069PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
268W
Number of Elements
1
Rise Time-Max
42ns
Element Configuration
Single
Power Dissipation
268W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
43 ns
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
127 ns
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
76A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.6V
Turn On Time
78 ns
Test Condition
400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 35A
Turn Off Time-Nom (toff)
188 ns
IGBT Type
Trench
Gate Charge
104nC
Current - Collector Pulsed (Icm)
105A
Td (on/off) @ 25°C
46ns/105ns
Switching Energy
390μJ (on), 632μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
54ns
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
In-Stock:1507 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$19.324560
$19.32456
10
$18.230717
$182.30717
100
$17.198790
$1719.879
500
$16.225273
$8112.6365
1000
$15.306862
$15306.862
IRGP4069PBF Product Details
IRGP4069PBF Description
IRGP4069PBF is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 600V. The operating temperature of IRGP4069PBF is -55°C~175°C TJ and its maximum power dissipation is 268W. IRGP4069PBF has 3 pins and it is available in Tube packaging way. The Collector-Emitter Breakdown Voltage of IRGP4069PBF is 600V and its Collector-Emitter Saturation Voltage is 1.6V.
IRGP4069PBF Features
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (ON) Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
IRGP4069PBF Applications
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
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