STGB6NC60HD-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGB6NC60HD-1 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
56W
Base Part Number
STGB6
Pin Count
3
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
56W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
15A
Reverse Recovery Time
21 ns
Collector Emitter Breakdown Voltage
600V
Turn On Time
17.3 ns
Test Condition
390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 3A
Turn Off Time-Nom (toff)
222 ns
Gate Charge
13.6nC
Current - Collector Pulsed (Icm)
21A
Td (on/off) @ 25°C
12ns/76ns
Switching Energy
20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
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STGB6NC60HD-1 Product Details
STGB6NC60HD-1 Description
The STGB6NC60HD-1 is an N-channel 600 V, 7 A, very fast IGBT using the latest high-voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs characterized by outstanding performance.
STGB6NC60HD-1 Features
Low VCE(sat)
Low CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultra-fast recovery antiparallel diode
High-frequency operation
STGB6NC60HD-1 Applications
High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
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