STGW40H120F2 Description
IGBTs with the STGW40H120F2 field-stop structure were developed using a proprietary trench gate field-stop structure. These IGBTs are part of the H series of IGBTs, which provide the best compromise between conduction and switching losses for high switching frequency converter efficiency. Furthermore, a slightly positive VCE(sat) temperature coefficient and a highly tight parameter distribution make paralleling safer.
STGW40H120F2 Features
Safe paralleling
Minimized tail current
Low thermal resistance
High-speed switching series
VCE(sat) = 2.1 V (Typ.) @ IC = 40 A
Maximum junction temperature: TJ = 175 °C
5 μs minimum short-circuit withstand time at TJ = 150 °C
STGW40H120F2 Applications
