IRG4BC30F-SPBF Description
IRG4BC30F-SPBF is a 600V insulated gate bipolar transistor. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. The Infineon IRG4BC30F-SPBF can be designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30F-SPBF is in the TO‐220AB package with 100W power dissipation.
IRG4BC30F-SPBF Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry-standard TO-220AB package
Generation 4 IGBTs offer the highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
IRG4BC30F-SPBF Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Electronic point of sale (EPOS)
Enterprise systems
Enterprise machine
