IRG7PH30K10DPBF Description
IRG7PH30K10DPBF is a 1200v insulated gate bipolar transistor with an ultrafast soft recovery diode. The transistor IRG7PH30K10DPBF provides high efficiency in a wide range of applications, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low Vce(on) and low switching losses. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG7PH30K10DPBF is in the TO247AC package with 150W power dissipation.
IRG7PH30K10DPBF Features
Low VcE (ON) Trench IGBTTechnology
Low switching losses
10 μS short circuit SOA
Square RBSOA
100% of the parts tested for lLm
Positive VcE (ON) Temperature coefficient
Ultra-fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead-Free Package
IRG7PH30K10DPBF Applications
Automotive
Hybrid, electric & powertrain systems
Industrial
Aerospace & Defense
Enterprise systems
Datacenter & enterprise computing
