AIGB50N65F5ATMA1 Description
The AIGB50N65F5ATMA1 is a High speed FAST IGBT in TRENCHSTOP? 5 technology. For electric and hybrid vehicles, energy efficiency is the most crucial factor. Infineon created the 650 V TRENCHSTOP? 5 AUTO technology with H5/F5 optimization in order to provide the fastest switching, and maximum efficiency automotive applications, such as On-Board Charger, PFC, DC/DC, and DC/AC.
With the lowest switching and conduction losses in its class, TRENCHSTOP? 5 AUTO is an IGBT technology. The high efficiency that results either allows for a reduction in the size of the electric vehicle's battery or an increase in cruising range. It aids in lowering total fuel consumption for hybrid vehicles. Where engineers were accustomed to using solely MOSFETs, the excellent performance of TRENCHSTOP? 5 AUTO offers a cost-optimized option.
AIGB50N65F5ATMA1 Features
Maximum junction temperature 175°C
Dynamically stress tested
Qualified according to AEC-Q101
Green package (RoHS compliant)
Best-in-Class efficiency in hard switching and resonant topologies
650V breakdown voltage
Low gate charge QG
AIGB50N65F5ATMA1 Applications
