STGD10NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGD10NC60KDT4 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
62W
Terminal Form
GULL WING
Base Part Number
STGD10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
17 ns
Power - Max
62W
Transistor Application
POWER CONTROL
Rise Time
6.5ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
72 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
20A
Reverse Recovery Time
22 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Max Breakdown Voltage
600V
Turn On Time
23 ns
Test Condition
390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 5A
Turn Off Time-Nom (toff)
242 ns
Gate Charge
19nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
17ns/72ns
Switching Energy
55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4937 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.427040
$6.42704
10
$6.063245
$60.63245
100
$5.720043
$572.0043
500
$5.396267
$2698.1335
1000
$5.090818
$5090.818
STGD10NC60KDT4 Product Details
Description
The STGD10NC60KDT4 is a 600 V short-circuit robust IGBT with a current rating of 10 amps. These devices are advanced PowerMESHTM technology-based IGBTs that are extremely fast. This method ensures a good balance between switching performance and low on-state behavior. For resonant or soft-switching applications, these devices are ideal.
Features
Very soft ultra fast recovery antiparallel diode
Short-circuit withstand time 10 μs
Lower on voltage drop (VCE(sat))
Lower CRES / CIES ratio (no cross-conduction susceptibility)
High efficiency and fast switching
Applications
High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drives
Consumer electronics
Industrial technology
The energy sector
Related Products
Similar Transistors - IGBTs - Single from STMicroelectronics and other manufacturers
