STGW60H65FB Description
These advanced proprietary trench gate and field-stop structures-based IGBT devices were created. These components are a part of the new HB series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of any frequency converter. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.
STGW60H65FB Features
? TJ = 175 °C is the maximum junction temperature.
? Series of high-speed switches
? Tail current was reduced.
? IC = 60 A, VCE(sat) = 1.6 V (typ.)
? Closely spaced parameter distribution
? Paralleling safely
? Low thermal conductivity
STGW60H65FB Applications
