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STGW45HF60WDI

STGW45HF60WDI

STGW45HF60WDI

STMicroelectronics

STGW45HF60WDI datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW45HF60WDI Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation250W
Base Part Number STGW45
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element ConfigurationSingle
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 145 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.9V
Test Condition 400V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Gate Charge160nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C -/145ns
Switching Energy 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2794 items

STGW45HF60WDI Product Details

STGW45HF60WDI Description

The?°HF?± family is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The?°W?± series is a subset of products tailored to high switching frequency operation

(over 100 kHz).



STGW45HF60WDI Features

Improved Eoff at elevated temperature

Low CRES / CIES ratio (no cross-conduction

susceptibility)

Ultra-fast soft recovery antiparallel diode



STGW45HF60WDI Applications

Welding

High-frequency converters

Power factor correction



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