Descriptions
The IRG4BC30FDPBF is a bipolar transistor featuring an ultrafast soft recovery diode and an insulated gate. It is designed to operate at medium operating frequencies of 1 to 5 kHz in hard switching mode and >20 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design has a narrower parameter distribution and improved efficiency. For usage in bridge arrangements, the IGBT is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes. The HEXFRED? diodes have been tuned for use with IGBTs. Snubbing is required less or not at all when recovery qualities are minimized.
Features
● Optimized for specific application conditions
● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
● IGBT co-packaged with HEXFREDTM ultrafast,
● Ultra-soft-recovery anti-parallel diodes for use in bridge configurations
● Industry-standard TO-220AB package
● Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
● Lead-Free
Applications
● HVAC
● Consumer Electronics
● Power Management
● Switching
● Amplification
● Converters
● Automatic Switch
