STGW40N120KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW40N120KD Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
-55°C~125°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
240W
Base Part Number
STGW40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
48 ns
Power - Max
240W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
420 ns
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
80A
Reverse Recovery Time
84 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.8V
Turn On Time
83 ns
Test Condition
960V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.85V @ 15V, 30A
Turn Off Time-Nom (toff)
564 ns
Gate Charge
126nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
48ns/338ns
Switching Energy
3.7mJ (on), 5.7mJ (off)
Gate-Emitter Voltage-Max
25V
Gate-Emitter Thr Voltage-Max
6.5V
Height
21.07mm
Length
16.02mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2875 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.926317
$1.926317
10
$1.817280
$18.1728
100
$1.714415
$171.4415
500
$1.617373
$808.6865
1000
$1.525823
$1525.823
STGW40N120KD Product Details
STGW40N120KD Description
The STGW40N120KD high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low ON-state behavior.
STGW40N120KD Features
Low on-losses
High current capability
Low gate charge
Short circuit withstand time 10 μs
IGBT co-packaged with Ultrafast free-wheeling diode
ROHS3 Compliant
No SVHC
Lead Free
STGW40N120KD Applications
Motor control
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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