Name: FGH20N60SFDTU
Brand: ON Semiconductor
SKU: FGH20N60SFDTU
Price: 3.80000 USD
Availability: InStock

new-10%

FGH20N60SFDTU

Manufacturer part number:FGH20N60SFDTU

Manufacturer:ON Semiconductor

Description:FGH20N60SFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH20N60SFDTU Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	165W
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	13 ns
Power - Max	165W
Transistor Application	POWER CONTROL
Rise Time	16ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	90 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	34 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	600V
Turn On Time	28 ns
Test Condition	400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Turn Off Time-Nom (toff)	123 ns
IGBT Type	Field Stop
Gate Charge	65nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	13ns/90ns
Switching Energy	370μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	48ns
Height	20.6mm
Length	15.6mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FGH20N60SFDTU Product Details

FGH20N60SFDTU Description

FGH20N60SFDTU belongs to the new series of Field Stop IGBTs provided by ON Semiconductor. Based on the advanced technology, t is able to provide the high current capability, high input impedance, and fast switching speed. Therefore, it is well suited for automotive chargers, inverters, and other applications requiring low conduction and switching losses.