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STGW39NC60VD

STGW39NC60VD

STGW39NC60VD

STMicroelectronics

STGW39NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW39NC60VD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation250W
Current Rating40A
Base Part Number STGW39
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation250W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time33 ns
Transistor Application POWER CONTROL
Rise Time13ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 178 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 45ns
Continuous Drain Current (ID) 40A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.8V
Turn On Time46 ns
Test Condition 390V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 366 ns
Gate Charge126nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 33ns/178ns
Switching Energy 333μJ (on), 537μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1151 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.60000$4.6
30$3.95667$118.7001
120$3.46817$416.1804
510$2.99616$1528.0416

STGW39NC60VD Product Details

STGW39NC60VD Description

This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior.



STGW39NC60VD Features

Low CRES / CIES ratio (no cross conduction

susceptibility)

IGBT co-packaged with ultra-fast free-wheeling

diode



STGW39NC60VD Applications

High-frequency inverters

UPS

Motor drivers

Induction heating



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