STGP10NB60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP10NB60S Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
80W
Current Rating
10A
Base Part Number
STGP10
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Input Type
Standard
Turn On Delay Time
7 μs
Transistor Application
POWER CONTROL
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
29A
Continuous Drain Current (ID)
10A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
1160 ns
Test Condition
480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.75V @ 15V, 10A
Continuous Collector Current
10A
Turn Off Time-Nom (toff)
3100 ns
Gate Charge
33nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
700ns/1.2μs
Switching Energy
600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Height
9.15mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2817 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.042400
$4.0424
10
$3.813585
$38.13585
100
$3.597722
$359.7722
500
$3.394077
$1697.0385
1000
$3.201959
$3201.959
STGP10NB60S Product Details
STGP10NB60S Description
STGP10NB60S is a Power MESH? process from the manufacturer of STMicroelectronics. The operating temperature of STGP10NB60S is -55°C~150°C TJ and its maximum power dissipation are 80W. It is available in the TO-220-3 packaging way. This IGBT utilizes the advanced Power MESH? process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
STGP10NB60S Features
Low on-voltage drop (VCE(sat))
High current capability
STGP10NB60S Applications
Light dimmer
Static relays
Motor drive
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