STGW30H65FB Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGW30H65FB Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
STGW30H65FB Applications
