Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STGF7NC60HD

STGF7NC60HD

STGF7NC60HD

STMicroelectronics

STGF7NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGF7NC60HD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status NRND (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation25W
Current Rating6A
Base Part Number STGF7
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation25W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time18.5 ns
Transistor Application POWER CONTROL
Rise Time8.5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 72 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 10A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.5V
Turn On Time25.5 ns
Test Condition 390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Turn Off Time-Nom (toff) 221 ns
Gate Charge35nC
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C 18.5ns/72ns
Switching Energy 95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 9.3mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1540 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.547214$0.547214
10$0.516240$5.1624
100$0.487019$48.7019
500$0.459452$229.726
1000$0.433445$433.445

STGF7NC60HD Product Details

STGF7NC60HD Description


STGF7NC60HD are extremely quick IGBTs that are developed using the latest PowerMESH technology. This technique ensures an outstanding balance between switching speed and low on-state behavior. These devices are excellent for soft- or resonant switching applications.


STGF7NC60HD Features


Low on-voltage drop
Off losses include tail current
Losses include diode recovery energy
High frequency operation up to 70 kHz
Very soft ultra fast recovery anti parallel diode


STGF7NC60HD Applications


High frequency inverters
SMPS
PFC
Motor drivers

Get Subscriber

Enter Your Email Address, Get the Latest News