IRGPS60B120KDP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGPS60B120KDP Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-274AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
595W
Current Rating
105A
Number of Elements
1
Element Configuration
Single
Power Dissipation
595W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
72 ns
Transistor Application
MOTOR CONTROL
Rise Time
32ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
366 ns
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
105A
Reverse Recovery Time
180 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.5V
Turn On Time
104 ns
Test Condition
600V, 15A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.75V @ 15V, 60A
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
105A
Turn Off Time-Nom (toff)
411 ns
IGBT Type
NPT
Gate Charge
340nC
Current - Collector Pulsed (Icm)
240A
Switching Energy
3.21mJ (on), 4.78mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
58ns
Height
25.05mm
Length
16.1mm
Width
5.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4788 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$22.50000
$22.5
25
$19.82080
$495.52
100
$17.72200
$1772.2
500
$16.08970
$8044.85
IRGPS60B120KDP Product Details
IRGPS60B120KDP Description
The IRGPS60B120KDP is a 1200V Ultrafast 5 to 40kHz copack IGBT with soft recovery diode for motor control. Hard switching is a high-frequency switching method. Generation 4 IGBTs have a better parameter distribution and efficiency than Generation 3. HEXFRED diodes are utilized in bridge arrangements and are optimized for performance.
IRGPS60B120KDP Features
? IGBT Technology with Low VCE (on) Non Punch
? VF with Low Diode
? Short-circuit capability of 10 μs.
? RBSOA is square.
? Reverse Recovery Characteristics of Ultrasoft Diodes
? VCE (on) Temperature Coefficient is positive.
? Package Super-247
? Lead-free
IRGPS60B120KDP Applications
? Power Management
? Alternative Energy
? Motor Drive
? Control
? Industrial
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