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SIGC61T60NCX1SA1

SIGC61T60NCX1SA1

SIGC61T60NCX1SA1

Infineon Technologies

SIGC61T60NCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC61T60NCX1SA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
Published 2016
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Position UPPER
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-XUUC-N4
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage600V
Current - Collector (Ic) (Max) 75A
Turn On Time90 ns
Test Condition 300V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 75A
Turn Off Time-Nom (toff) 205 ns
IGBT Type NPT
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 65ns/170ns
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4754 items

SIGC61T60NCX1SA1 Product Details

SIGC61T60NCX1SA1 Description


The SIGC61T60NCX1SA1 is an IGBT Chip in NPT-technology. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The name also implies the union between them. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.



SIGC61T60NCX1SA1 Features


  • Short circuit prove

  • Positive temperature coefficient

  • Easy paralleling

  • 600V NPT technology

  • 100μm chip



SIGC61T60NCX1SA1 Applications


  • Drives

  • It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • It is used in UPS (Uninterruptible Power Supply) system.

  • It is used in AC and DC motor drives offering speed control.

  • It is used in chopper and inverters.

  • It is used in solar inverters.


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