STGD4M65DF2 Description
The STGD4M65DF2 IGBT was created using a cutting-edge, exclusive trench gate field-stop structure. The device is a member of the M series of IGBTs, which represent the performance and efficiency of an inverter system in which low-loss and short-circuit functionality are crucial. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operation.
STGD4M65DF2 Features
Safer paralleling
Low thermal resistance
Tight parameter distribution
VCE(sat) = 1.6 V (typ.) @ IC = 4 A
6 μs of short-circuit withstand time
Soft and very fast recovery antiparallel diode
STGD4M65DF2 Applications
Automotive
Enterprise systems
Communications equipment
